郝霄鹏,男,1972年8月出生,工学博士,教授,博士生导师。E-mail:xphao@qlu.edu.cn
教育部“新世纪优秀人才”,泰山学者特聘专家。主要从事(1)宽带隙半导体晶体的生长、加工及器件研究;(2)新型能源材料的制备及应用研究。作为项目负责人先后承担了国家863项目、国家自然科学基金重点、面上项目、教育部重点项目、山东省自然科学重大基础研究等项目;在Adv. Mater., Angew. Chem. Int. Ed., Adv. Funct. Mater.等学术期刊上发表SCI论文200余篇,被诺贝尔物理学奖获得者等学者他引5000余次,研究工作被Nature、Nature China和Nature Materials作为亮点进行评论。获授权发明专利30余项,其中GaN单晶生长相关发明专利实现了科技成果转化。获山东省自然科学奖二等奖、中国建材科技奖二等奖。
教育经历:
1999/9 - 2002/6 山东大学,材料学,博士
1996/9 - 1999/4 浙江大学,材料学,硕士
1992/9 - 1996/6 山东轻工业学院,硅酸盐工程,学士
工作经历:
2020/10至今 bwin官网登录入口,材料科学与工程学院,教授
2006/9 -- 2020/10 山东大学,晶体材料研究所,教授
2005/4 -- 2005/6 新加坡国立大学, 物理系,访问学者
2004/9 -- 2006/8 山东大学,晶体材料研究所,副教授
2002/7 -- 2004/8 山东大学,晶体材料研究所,讲师
主要科研项目:
1.低应力低位错密度4英寸GaN单晶的HVPE生长研究,2019,01-2022,12,国家自然科学基金,66万
2. 新型衬底上高质量GaN单晶的HVPE生长及自剥离研究,2016,01-2019,12,国家自然科学基金,76.8万
3. GaN体单晶生长基础研究,2009,01-2012,12,国家自然科学基金,140万
4. 适用于分布式光伏系统的新型能源存储器件,2017,08-2019,07,山东省自然科学基金重大基础类项目,90万
5. 4英寸氮化镓单晶衬底产业化技术研究,2019,08-2021,08,山东省重点研发计划,100万
6. 泰山学者特聘专家经费,2023,01-2027,12,200
7.宽禁带半导体氮化物(GaN、AlN)单晶衬底,济南市"新高校20条"项目,2022.01-2024.12,90万元
代表性论文:
Weidong He,Zedong Lin,Kangning Zhao,Yanlu Li,Chao Meng,Jiantao Li,Sungsik Lee,Yongzhong Wu*,Xiaopeng Hao*, Interspace and Vacancy Modulation: Promoting the Zinc Storage of an Alcohol-Based Organic-Inorganic Cathode in a Water-Organic Electrolyte, Adv.Mater., 2022, 34, 2203920
Zizheng Ai, Meiling Huang, Dong Shi, Mingzhi Yang, Haixiao Hu, Baoguo Zhang, Yongliang Shao, Jianxing Shen, Yongzhong Wu*, Xiaopeng Hao*,Phase engineering of CdS optimized by BP with p-n junction: Establishing spatial-gradient charges transmission mode toward efficient photocatalytic water reduction, Appl. Catal. B, 2022, 315, 121577
Dong Shi,Mingzhi Yang,Baoguo Zhang,Zizheng Ai,Haixiao Hu,Yongliang Shao,Jianxing Shen,Yongzhong Wu*, Xiaopeng Hao*,BCN-Assisted Built-In Electric Field in Heterostructure: An Innovative Path for Broadening the Voltage Window of Aqueous Supercapacitor, Adv. Funct. Mater. 2021, 2108843
Weidong He, Shouzhi Wang, Yongliang Shao, Zhen Kong, Huayao Tu, Yongzhong Wu*, Xiaopeng Hao*, Water Invoking Interface Corrosion: An Energy Density Booster for Ni//Zn Battery, Adv. Energy Mater., 2021, 11, 2003268
Shouzhi Wang, Huaping Zhao, Songyang Lv, Hehe Jiang, Yongliang Shao, Yongzhong Wu, Xiaopeng Hao*, Yong Lei*, Insight into Nickel-Cobalt Oxysulfide Nanowires as Advanced Anode for Sodium-Ion Capacitors, Adv. Energy Mater., 2021, 11, 2100408
Bin Chang, Lili, Li, Dong Shi, Hehe Jiang, Zizheng Ai, Shouzhi Wang, Yongliang Shao, Jianxing Shen, Yongzhong Wu, Yanlu Li*, Xiaopeng Hao*, Metal-free boron carbonitride with tunable boron Lewis acid sites for enhanced nitrogen electroreduction to ammonia, Appl. Catal. B, 2021, 119622
Shouzhi Wang, Lili Li, Weidong He, Yongliang Shao, Yanlu Li, Yongzhong Wu, Xiaopeng Hao*, Oxygen Vacancy Modulation of Bimetallic Oxynitride Anodes toward Advanced Li-Ion Capacitors, Adv.Funct.Mater., 2020, 30, 2000350
Shouzhi Wang, Lili Li, Yongliang Shao, Lei Zhang, Yanlu Li*, Yongzhong Wu, Xiaopeng Hao*, Transition‐Metal Oxynitride: A Facile Strategy for Improving Electrochemical Capacitor Storage, Adv.Mater., 2019, 1806088
Zizheng Ai, Yongliang Shao, Bin Chang, Baibiao Huang, Yongzhong Wu*, Xiaopeng Hao*, Effective orientation control of photogenerated carrier separation via rational design of a Ti3C2(TiO2)@CdS/MoS2 photocatalytic system, Appl. Catal. B, 2019, 242, 202-208
Zizheng Ai, Gang Zhao, Yueyao Zhong, Yongliang Shao, Baibiao Huang, Yongzhong Wu*, Xiaopeng Hao*, Phase junction CdS: High efficient and stable photocatalyst for hydrogen generation, Appl. Catal. B, 2018, 221, 179-186
Gang Zhao, Yanling Cheng, Yongzhong Wu, Xijin Xu, Xiaopeng Hao*, New 2D Carbon Nitride Organic Materials Synthesis with Huge-Application Prospects in CN Photocatalyst, Small, 2018, 14, 1704138
Shouzhi Wang, Changlong Sun, Yongliang Shao, Yongzhong Wu, Lei Zhang, Xiaopeng Hao*,Self-Supporting GaN Nanowires/Graphite Paper: Novel High-Performance Flexible Supercapacitor Electrodes,Small,2017, 13, 1603330
Gang Zhao, Tailin Wang, Yongliang Shao, Yongzhong Wu, Baibiao Huang, Xiaopeng Hao*,A Novel Mild Phase-Transition to Prepare Black Phosphorus Nanosheets with Excellent Energy Applications,Small,2017, 13, 1602243
Yueyao Zhong, Yongliang Shao, Fukun Ma, Yongzhong Wu, Baibiao Huang, Xiaopeng Hao*,Band-gap-matched CdSe QD/WS2 nanosheet composite: Size-controlled photocatalyst for high-efficiency water splitting,Nano Energy,2017, 31, 84-89
Shouzhi Wang, Lei Zhang, Changlong Sun, Yongliang Shao, Yongzhong Wu, Jiaxin Lv, Xiaopeng Hao*,Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials,Adv. Mater.,2016, 28, 3768-3776
Fukun Ma, Yongzhong Wu, Yongliang Shao, Yueyao Zhong, Jiaxin Lv, Xiaopeng Hao*,0D/2D nanocomposite visible light photocatalyst for highly stable and efficient hydrogen generation via recrystallization of CdS on MoS2 nanosheets,Nano Energy,2016, 27, 466-474
Yueyao Zhong, Gang Zhao, Fukun Ma, Yongzhong Wu*, Xiaopeng Hao*,Utilizing photocorrosion-recrystallization to prepare a highly stable and efficient CdS/WS2 nanocomposite photocatalyst for hydrogen evolution,Appl. Catal. B,2016, 199, 466-472
Lei Zhang, Xianlei Li, Yongliang Shao, Jiaoxian Yu, Yongzhong Wu, Xiaopeng Hao*, Zhengmao Yin, Yuanbin Dai, Yuan Tian, Qin Huo, Yinan Shen, Zhen Hua, and Baoguo Zhang, Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate, ACS Appl. Mater. Interfaces 2015, 7, 4504−4510
Gang Zhao , Shuo Han , Aizhu Wang , Yongzhong Wu , Mingwen Zhao*, Zhengping Wang*, and Xiaopeng Hao*“Chemical Weathering” Exfoliation of Atom-Thick Transition Metal Dichalcogenides and Their Ultrafast Saturable Absorption Properties, Adv. Funct. Mater. 2015, 25, 5292–5299
Miao Du, Xianlei Li, Aizhu Wang, Yongzhong Wu, Xiaopeng Hao*, and Mingwen Zhao*, One-Step Exfoliation and Fluorination of Boron Nitride Nanosheets and a Study of Their Magnetic Properties, Angew. Chem. Int. Ed., 53, 3645-3649, 2014
Xianlei Li, Xiaopeng Hao*, Mingwen Zhao*, Yongzhong Wu, Jiaxiang Yang, Yupeng Tian and Guodong Qian, Exfoliation of Hexagonal Boron Nitride by Molten Hydroxides, Adv. Mater. 2013, 25, 2200–2204
部分授权发明专利
1. 一种通过设置温度梯度制备自支撑氮化镓体块单晶的方法,ZL 202210931301.0
2. 一种用于制备氮化铝预制料的坩埚装置, ZL 202210257438.2
3. 一种水热腐蚀多孔衬底生长自支撑氮化镓单晶的方法,ZL 201710601044.3
4. 阻碍半极性面氮化镓生长并制备自剥离氮化镓晶体的方法,ZL202110701742.7
5. 一种多步连续调控直接生长自剥离氮化镓的方法,ZL202110701740.8
6. 一种使用图形化退火多孔结构进行GaN单晶生长的方法,ZL 201410114052.1
7. 利用六方氮化硼纳米片生长高质量氮化镓晶体的方法,ZL 201410024671.1
8. 一种利用高温退火表征GaN外延层中位错的方法,ZL 201410000379.6
9. 一种使用减薄键合结构进行GaN单晶生长的方法,ZL 201210015837.4
10. 在SiC衬底上直接生长自剥离GaN单晶的方法,ZL 201410113538.3
11. 锂离子超级电容器电极材料BCN纳米管的制备方法,ZL 201910016000.3
12. 一种用于氮化铝单晶生长的籽晶粘接方法,ZL 201910015993.2